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MJD3055 by:

Power Bipolar Transistor,

Part Details for MJD3055 by Galaxy Semi-Conductor Co Ltd

Overview of MJD3055 by Galaxy Semi-Conductor Co Ltd

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for MJD3055

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MJD3055 Part Data Attributes

MJD3055 Galaxy Semi-Conductor Co Ltd
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MJD3055 Galaxy Semi-Conductor Co Ltd Power Bipolar Transistor,
Part Life Cycle Code Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature TUBE: 80
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 60 V
Configuration SINGLE
DC Current Gain-Min (hFE) 5
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Reference Standard MIL-STD-202
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 2 MHz
VCEsat-Max 8 V

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