MJD112-001G
vs
MJD112-1G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
| Package Description |
IN-LINE, R-PSIP-T3
|
DPAK-3
|
| Pin Count |
3
|
4
|
| Manufacturer Package Code |
CASE 369D-01
|
369
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
2 A
|
2 A
|
| Collector-Emitter Voltage-Max |
100 V
|
100 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
200
|
200
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
25 MHz
|
25 MHz
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
DPAK INSERTION MOUNT
|
| Factory Lead Time |
|
56 Weeks, 1 Day
|
| Samacsys Manufacturer |
|
onsemi
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
20 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare MJD112-001G with alternatives
Compare MJD112-1G with alternatives