MG50G1BL3
vs
D64EV6
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
INTERSIL CORP
|
| Package Description |
FLANGE MOUNT, R-PUFM-X3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
ISOLATED
|
|
| Collector Current-Max (IC) |
50 A
|
50 A
|
| Collector-Emitter Voltage-Max |
450 V
|
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
|
| DC Current Gain-Min (hFE) |
100
|
25
|
| JESD-30 Code |
R-PUFM-X3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
NPN
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
UNSPECIFIED
|
|
| Terminal Position |
UPPER
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
5
|
| Rohs Code |
|
No
|
| Fall Time-Max (tf) |
|
1000 ns
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
180 W
|
| Rise Time-Max (tr) |
|
1000 ns
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| VCEsat-Max |
|
3 V
|
|
|
|
Compare MG50G1BL3 with alternatives