MG25Q6ES1
vs
MG25Q6ES42
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
| Package Description |
,
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Collector Current-Max (IC) |
25 A
|
25 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
| Number of Elements |
6
|
6
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Additional Feature |
|
HIGH SPEED
|
| Fall Time-Max (tf) |
|
500 ns
|
| JESD-30 Code |
|
R-PUFM-D17
|
| Number of Terminals |
|
17
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
SOLDER LUG
|
| Terminal Position |
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
POWER CONTROL
|
| VCEsat-Max |
|
4 V
|
|
|
|
Compare MG25Q6ES1 with alternatives
Compare MG25Q6ES42 with alternatives