MEM832VI-120
vs
MEM832VLM-120
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOSAIC SEMICONDUCTOR INC
|
APTA GROUP INC
|
| Part Package Code |
DIP
|
|
| Package Description |
DIP,
|
DIP, DIP28,.1
|
| Pin Count |
28
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
120 ns
|
120 ns
|
| Additional Feature |
PAGE WRITE
|
|
| JESD-30 Code |
R-CDIP-T28
|
R-XDIP-T28
|
| Length |
35.56 mm
|
|
| Memory Density |
262144 bit
|
262144 bit
|
| Memory IC Type |
EEPROM
|
EEPROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
|
| Number of Terminals |
28
|
28
|
| Number of Words |
32768 words
|
32768 words
|
| Number of Words Code |
32000
|
32000
|
| Operating Mode |
ASYNCHRONOUS
|
|
| Operating Temperature-Max |
85 °C
|
125 °C
|
| Operating Temperature-Min |
-40 °C
|
-55 °C
|
| Organization |
32KX8
|
32KX8
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
5 V
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
10.7 mm
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
MILITARY
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
2.54 mm
|
|
| Base Number Matches |
2
|
2
|
| Rohs Code |
|
No
|
| Command User Interface |
|
NO
|
| Data Polling |
|
YES
|
| Endurance |
|
10000 Write/Erase Cycles
|
| JESD-609 Code |
|
e0
|
| Package Equivalence Code |
|
DIP28,.1
|
| Page Size |
|
64 words
|
| Standby Current-Max |
|
0.0003 A
|
| Supply Current-Max |
|
0.133 mA
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Toggle Bit |
|
YES
|
| Write Cycle Time-Max (tWC) |
|
10 ms
|
|
|
|
Compare MEM832VI-120 with alternatives