MEM832VI-120 vs CAT28C256HNA-12T feature comparison

MEM832VI-120 APTA Group Inc

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CAT28C256HNA-12T Catalyst Semiconductor

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer APTA GROUP INC CATALYST SEMICONDUCTOR INC
Package Description DIP, DIP28,.1 QCCJ,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 120 ns 120 ns
Command User Interface NO
Data Polling YES
Endurance 10000 Write/Erase Cycles
JESD-30 Code R-XDIP-T28 R-PQCC-J32
JESD-609 Code e0
Memory Density 262144 bit 262144 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Number of Terminals 28 32
Number of Words 32768 words 32768 words
Number of Words Code 32000 32000
Operating Temperature-Max 85 °C 105 °C
Operating Temperature-Min -40 °C -40 °C
Organization 32KX8 32KX8
Package Body Material CERAMIC PLASTIC/EPOXY
Package Code DIP QCCJ
Package Equivalence Code DIP28,.1
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE CHIP CARRIER
Page Size 64 words
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.003 A
Supply Current-Max 0.131 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE J BEND
Terminal Pitch 2.54 mm 1.27 mm
Terminal Position DUAL QUAD
Toggle Bit YES
Write Cycle Time-Max (tWC) 10 ms
Base Number Matches 2 2
Part Package Code QFJ
Pin Count 32
Additional Feature 100000 PROGRAM/ERASE CYCLES
Length 13.97 mm
Number of Functions 1
Operating Mode ASYNCHRONOUS
Programming Voltage 5 V
Seated Height-Max 3.55 mm
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Width 11.43 mm

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