MBM10A474-3CZ
vs
CY8C150-25DMB
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
FUJITSU SEMICONDUCTOR AMERICA INC
|
CYPRESS SEMICONDUCTOR CORP
|
| Package Description |
DIP,
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
3 ns
|
25 ns
|
| JESD-30 Code |
R-GDIP-T24
|
R-XDIP-T24
|
| Length |
30.3 mm
|
|
| Memory Density |
4096 bit
|
4096 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
4
|
4
|
| Number of Functions |
1
|
|
| Number of Ports |
1
|
|
| Number of Terminals |
24
|
24
|
| Number of Words |
1024 words
|
1024 words
|
| Number of Words Code |
1000
|
1000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
55 °C
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
1KX4
|
1KX4
|
| Output Characteristics |
OPEN-EMITTER
|
3-STATE
|
| Output Enable |
NO
|
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.84 mm
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
TTL
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
MILITARY
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
10.16 mm
|
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
No
|
| I/O Type |
|
SEPARATE
|
| JESD-609 Code |
|
e0
|
| Package Equivalence Code |
|
DIP24,.3
|
| Screening Level |
|
38535Q/M;38534H;883B
|
| Supply Voltage-Nom (Vsup) |
|
5 V
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare MBM10A474-3CZ with alternatives
Compare CY8C150-25DMB with alternatives