MBM10470A-10CZ vs IDT6167SA45DB feature comparison

MBM10470A-10CZ FUJITSU Semiconductor Limited

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IDT6167SA45DB Integrated Device Technology Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FUJITSU SEMICONDUCTOR AMERICA INC INTEGRATED DEVICE TECHNOLOGY INC
Package Description DIP, 0.300 INCH, CERDIP-20
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 10 ns 45 ns
JESD-30 Code R-GDIP-T18 R-GDIP-T20
Length 22.78 mm 25.3365 mm
Memory Density 4096 bit 16384 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 1 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 18 20
Number of Words 4096 words 16384 words
Number of Words Code 4000 16000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 75 °C 125 °C
Operating Temperature-Min -55 °C
Organization 4KX1 16KX1
Output Characteristics OPEN-EMITTER 3-STATE
Output Enable NO NO
Package Body Material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 5.08 mm 5.08 mm
Surface Mount NO NO
Technology TTL CMOS
Temperature Grade COMMERCIAL EXTENDED MILITARY
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 7.62 mm 7.62 mm
Base Number Matches 1 1
Rohs Code No
Part Package Code DIP
Pin Count 20
I/O Type SEPARATE
JESD-609 Code e0
Package Equivalence Code DIP20,.3
Screening Level MIL-STD-883 Class B
Standby Current-Max 0.01 A
Standby Voltage-Min 4.5 V
Supply Current-Max 0.1 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Terminal Finish TIN LEAD

Compare MBM10470A-10CZ with alternatives

Compare IDT6167SA45DB with alternatives