MB84VD21184EM-70PBS-E1 vs MB84VD21181EM-70PBS feature comparison

MB84VD21184EM-70PBS-E1 Spansion

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MB84VD21181EM-70PBS FUJITSU Semiconductor Limited

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Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SPANSION INC FUJITSU LTD
Part Package Code BGA BGA
Package Description TFBGA, TFBGA, BGA56,8X8,32
Pin Count 56 56
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Additional Feature SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8 SRAM IS ORGANIZED AS 256K X 16/512K X 8
JESD-30 Code R-PBGA-B56 R-PBGA-B56
JESD-609 Code e1 e0
Length 7.2 mm 7.2 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type MEMORY CIRCUIT MEMORY CIRCUIT
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 56 56
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 1MX16 1MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Supply Voltage-Max (Vsup) 3.3 V 3.3 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN SILVER COPPER TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 7 mm 7 mm
Base Number Matches 1 4
Pbfree Code No
Access Time-Max 70 ns
Mixed Memory Type FLASH+SRAM
Package Equivalence Code BGA56,8X8,32
Standby Current-Max 0.000015 A
Supply Current-Max 0.05 mA

Compare MB84VD21184EM-70PBS-E1 with alternatives

Compare MB84VD21181EM-70PBS with alternatives