MAPLAD30KP30A
vs
MAPLAD30KP30A/TR
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
MICROCHIP TECHNOLOGY INC
Package Description
R-PSSO-G1
S-PSSO-G1
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
36.8 V
36.8 V
Breakdown Voltage-Min
33.3 V
33.3 V
Breakdown Voltage-Nom
35.05 V
35.05 V
Case Connection
CATHODE
CATHODE
Clamping Voltage-Max
48.8 V
48.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
S-PSSO-G1
JESD-609 Code
e0
e0
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
30000 W
30000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
SQUARE
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
30 V
30 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
2
2
Compare MAPLAD30KP30A with alternatives
Compare MAPLAD30KP30A/TR with alternatives