MA1N6274ATR
vs
1N6274A-B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
DIODES INC
Package Description
O-PALF-W2
O-XALF-W2
Pin Count
2
Manufacturer Package Code
CASE 1
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
13.7 V
13.7 V
Breakdown Voltage-Min
12.4 V
12.4 V
Breakdown Voltage-Nom
13.05 V
13 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
18.2 V
18.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-XALF-W2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.52 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
11.1 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Reverse Current-Max
5 µA
Compare MA1N6274ATR with alternatives
Compare 1N6274A-B with alternatives