MA1N6270E3
vs
1.5KE9.1-GT3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
O-PALF-W2
O-PALF-W2
Pin Count
2
Manufacturer Package Code
CASE 1
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
10 V
10 V
Breakdown Voltage-Min
8.19 V
8.19 V
Breakdown Voltage-Nom
9.1 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
13.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.52 W
5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
7.37 V
7.37 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
JEDEC-95 Code
DO-201AE
Reference Standard
UL RECOGNIZED
Compare MA1N6270E3 with alternatives
Compare 1.5KE9.1-GT3 with alternatives