M470T2863FB3-CE6 vs W3HG128M64EEU806D4SG feature comparison

M470T2863FB3-CE6 Samsung Semiconductor

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W3HG128M64EEU806D4SG Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICROSEMI CORP
Part Package Code MODULE SODIMM
Package Description DIMM, DIMM200,24 DIMM,
Pin Count 200 200
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Access Time-Max 0.45 ns 0.45 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N200 R-XZMA-N200
Length 67.6 mm
Memory Density 8589934592 bit 8589934592 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 200
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min
Organization 128MX64 128MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Seated Height-Max 30.15 mm
Self Refresh YES YES
Supply Current-Max 1.16 mA
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL ZIG-ZAG
Base Number Matches 1 2
Pbfree Code Yes
JESD-609 Code e4
Terminal Finish GOLD

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Compare W3HG128M64EEU806D4SG with alternatives