M38510/23110BWA
vs
93422DMQB
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
NATIONAL SEMICONDUCTOR CORP
|
| Package Description |
DIP,
|
DIP, DIP22,.4
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
60 ns
|
60 ns
|
| JESD-30 Code |
R-XDIP-T22
|
R-GDIP-T22
|
| Memory Density |
1024 bit
|
1024 bit
|
| Memory IC Type |
STANDARD SRAM
|
CACHE SRAM
|
| Memory Width |
4
|
4
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
22
|
22
|
| Number of Words |
256 words
|
256 words
|
| Number of Words Code |
256
|
256
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
256X4
|
256X4
|
| Package Body Material |
UNSPECIFIED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Screening Level |
MIL-M-38510 Class B
|
38535Q/M;38534H;883B
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
TTL
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Length |
|
27.43 mm
|
| Output Characteristics |
|
3-STATE
|
| Package Equivalence Code |
|
DIP22,.4
|
| Seated Height-Max |
|
5.33 mm
|
| Supply Current-Max |
|
0.13 mA
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Terminal Pitch |
|
2.54 mm
|
| Width |
|
10.16 mm
|
|
|
|
Compare M38510/23110BWA with alternatives
Compare 93422DMQB with alternatives