M12L2561616A-6BVAG2A
vs
K4S561632D-NC7C0
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
VFBGA,
|
SOP,
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.24
|
8542.32.00.24
|
| Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
5.4 ns
|
5.4 ns
|
| Additional Feature |
AUTO REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
S-PBGA-B54
|
R-PDSO-G54
|
| Length |
8 mm
|
|
| Memory Density |
268435456 bit
|
268435456 bit
|
| Memory IC Type |
SYNCHRONOUS DRAM
|
SYNCHRONOUS DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
54
|
54
|
| Number of Words |
16777216 words
|
16777216 words
|
| Number of Words Code |
16000000
|
16000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
105 °C
|
70 °C
|
| Operating Temperature-Min |
-40 °C
|
|
| Organization |
16MX16
|
16MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
VFBGA
|
SOP
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
SMALL OUTLINE
|
| Seated Height-Max |
1 mm
|
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
| Terminal Form |
BALL
|
GULL WING
|
| Terminal Pitch |
0.8 mm
|
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Width |
8 mm
|
|
| Base Number Matches |
1
|
1
|
| Self Refresh |
|
YES
|
|
|
|
Compare M12L2561616A-6BVAG2A with alternatives
Compare K4S561632D-NC7C0 with alternatives