Findchips: Compare M12L2561616A-6BVAG2A vs M12L2561616A-6BVG2A

M12L2561616A-6BVAG2A vs M12L2561616A-6BVG2A feature comparison

Buy Now Datasheet

Buy Now Datasheet

Part Life Cycle Code	Active	Active
Ihs Manufacturer	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description	VFBGA,	VFBGA,
Reach Compliance Code	unknown	unknown
ECCN Code	EAR99	EAR99
HTS Code	8542.32.00.24	8542.32.00.24
Access Mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Access Time-Max	5.4 ns	5.4 ns
Additional Feature	AUTO REFRESH	AUTO/SELF REFRESH
JESD-30 Code	S-PBGA-B54	S-PBGA-B54
Length	8 mm	8 mm
Memory Density	268435456 bit	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
Memory Width	16	16
Number of Functions	1	1
Number of Ports	1	1
Number of Terminals	54	54
Number of Words	16777216 words	16777216 words
Number of Words Code	16000000	16000000
Operating Mode	SYNCHRONOUS	SYNCHRONOUS
Operating Temperature-Max	105 °C	85 °C
Operating Temperature-Min	-40 °C	-40 °C
Organization	16MX16	16MX16
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Code	VFBGA	VFBGA
Package Shape	SQUARE	SQUARE
Package Style	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Seated Height-Max	1 mm	1 mm
Supply Voltage-Max (Vsup)	3.6 V	3.6 V
Supply Voltage-Min (Vsup)	3 V	3 V
Supply Voltage-Nom (Vsup)	3.3 V	3.3 V
Surface Mount	YES	YES
Technology	CMOS	CMOS
Temperature Grade	INDUSTRIAL	INDUSTRIAL
Terminal Form	BALL	BALL
Terminal Pitch	0.8 mm	0.8 mm
Terminal Position	BOTTOM	BOTTOM
Width	8 mm	8 mm
Base Number Matches	1	1
Self Refresh		YES
	Memory » DRAMs	Memory » DRAMs