M12L128168A-7TG2S vs AS4C4M16SA-6TINTR feature comparison

M12L128168A-7TG2S Elite Semiconductor Memory Technology Inc

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AS4C4M16SA-6TINTR Alliance Memory Inc

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Part Life Cycle Code Active Active
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC ALLIANCE MEMORY INC
Package Description , FBGA-54
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Date Of Intro 2017-08-18 2018-10-04
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns 5.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 143 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54 S-PBGA-B54
Length 22.22 mm 8 mm
Memory Density 134217728 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 54 54
Number of Words 8388608 words 4194304 words
Number of Words Code 8000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 8MX16 4MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TFBGA
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE, THIN PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH
Refresh Cycles 4096
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.19 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Form GULL WING BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position DUAL BOTTOM
Width 10.16 mm 8 mm
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 8 Weeks
Samacsys Manufacturer Alliance Memory
JESD-609 Code e3
Moisture Sensitivity Level 3
Temperature Grade INDUSTRIAL
Terminal Finish Tin (Sn)

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