M12L128168A-7TG2S
vs
AS4C4M16SA-6TINTR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
ALLIANCE MEMORY INC
Package Description
,
FBGA-54
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.02
8542.32.00.02
Date Of Intro
2017-08-18
2018-10-04
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
5.4 ns
5.4 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
143 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PDSO-G54
S-PBGA-B54
Length
22.22 mm
8 mm
Memory Density
134217728 bit
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
SYNCHRONOUS DRAM
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
54
54
Number of Words
8388608 words
4194304 words
Number of Words Code
8000000
4000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
85 °C
Operating Temperature-Min
-40 °C
Organization
8MX16
4MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TSOP2
TFBGA
Package Equivalence Code
TSOP54,.46,32
Package Shape
RECTANGULAR
SQUARE
Package Style
SMALL OUTLINE, THIN PROFILE
GRID ARRAY, THIN PROFILE, FINE PITCH
Refresh Cycles
4096
Seated Height-Max
1.2 mm
1.2 mm
Self Refresh
YES
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.002 A
Supply Current-Max
0.19 mA
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
3 V
3 V
Supply Voltage-Nom (Vsup)
3.3 V
3.3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Terminal Form
GULL WING
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
DUAL
BOTTOM
Width
10.16 mm
8 mm
Base Number Matches
1
1
Rohs Code
Factory Lead Time
8 Weeks
Samacsys Manufacturer
Alliance Memory
JESD-609 Code
e3
Moisture Sensitivity Level
3
Temperature Grade
INDUSTRIAL
Terminal Finish
Tin (Sn)
Compare M12L128168A-7TG2S with alternatives
Compare AS4C4M16SA-6TINTR with alternatives