Datasheets
AS4C4M16SA-6TINTR by: Alliance Memory Inc

IC SDRAM 64MBIT 166MHZ 54TSOP

Part Details for AS4C4M16SA-6TINTR by Alliance Memory Inc

Overview of AS4C4M16SA-6TINTR by Alliance Memory Inc

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Price & Stock for AS4C4M16SA-6TINTR

Part # Distributor Description Stock Price Buy
DISTI # 85AK7013
Newark Sdr, 64Mb, 4M X 16, 3.3V, 54Pin Tsop Ii, 166 Mhz, Industrial Temp(.63) Tape And Reel |Alliance Memory AS4C4M16SA-6TINTR RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $3.0000
  • 5,000 $2.9000
$2.9000 / $3.0000 Buy Now
DISTI # AS4C4M16SA-6TINTR-ND
DigiKey IC DRAM 64MBIT PAR 54TSOP II Min Qty: 1000 Lead time: 8 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 1,000 $2.3469
$2.3469 Buy Now
DISTI # AS4C4M16SA-6TINTR
Avnet Americas DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V -40 to 85°C 54-Pin TSOPII T/R - Tape and Reel (Alt: AS4C4M16SA-6TINTR) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel 4000
149000 Factory Stock
  • 1,000 $1.8900
$1.8900 Buy Now
DISTI # 913-4C4M16SA-6TINTR
Mouser Electronics DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp(.63) Tape and Reel, A Die RoHS: Compliant 290
  • 1 $3.1600
  • 10 $2.8700
  • 100 $2.5000
  • 250 $2.4900
  • 500 $2.4000
  • 1,000 $2.2700
  • 2,000 $2.2600
$2.2600 / $3.1600 Buy Now
Future Electronics AS4C4M16SA Series 64 Mb (4 M x 16) 3.6 V Surface Mount SDRAM - TSOP-54 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 1,000 $1.8600
$1.8600 Buy Now
Future Electronics AS4C4M16SA Series 64 Mb (4 M x 16) 3.6 V Surface Mount SDRAM - TSOP-54 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 1,000 $1.9400
  • 2,000 $1.9200
  • 3,000 $1.9000
  • 4,000 $1.8900
  • 5,000 $1.8600
$1.8600 / $1.9400 Buy Now
DISTI # AS4C4M16SA-6TINTR
TME IC: DRAM memory, 64MbDRAM, 4Mx16bit, 3.3V, 166MHz, 6ns, TSOP54 II Min Qty: 1 3737
  • 1 $3.2800
  • 5 $3.1800
  • 25 $2.9700
  • 100 $2.5600
  • 250 $2.4100
  • 1,000 $2.2900
$2.2900 / $3.2800 Buy Now
Karl Kruse GmbH & Co KG SDR 64Mb 4M x 16 3.3V 54pin TSOP II 166 Mhz industrial temp(.63) Tape and Reel 194000
RFQ
DISTI # AS4C4M16SA-6TINTR
Avnet Silica DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V -40 to 85�C 54-Pin TSOPII T/R (Alt: AS4C4M16SA-6TINTR) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 9 Weeks, 0 Days Silica - 0
Buy Now

Part Details for AS4C4M16SA-6TINTR

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AS4C4M16SA-6TINTR Part Data Attributes

AS4C4M16SA-6TINTR Alliance Memory Inc
Buy Now Datasheet
Compare Parts:
AS4C4M16SA-6TINTR Alliance Memory Inc IC SDRAM 64MBIT 166MHZ 54TSOP
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description FBGA-54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Factory Lead Time 8 Weeks
Date Of Intro 2018-10-04
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code S-PBGA-B54
JESD-609 Code e3
Length 8 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape SQUARE
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin (Sn)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for AS4C4M16SA-6TINTR

This table gives cross-reference parts and alternative options found for AS4C4M16SA-6TINTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C4M16SA-6TINTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AS4C4M16S-6TAN Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 Alliance Memory Inc AS4C4M16SA-6TINTR vs AS4C4M16S-6TAN
HY57V651620BLTC-75 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc AS4C4M16SA-6TINTR vs HY57V651620BLTC-75
HYB39S64160ETL-7.5 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG AS4C4M16SA-6TINTR vs HYB39S64160ETL-7.5
V54C36516G4VT7 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation AS4C4M16SA-6TINTR vs V54C36516G4VT7
K4S641632H-UC750 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 Samsung Semiconductor AS4C4M16SA-6TINTR vs K4S641632H-UC750
AS4C4M16S-6TANTR Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 Alliance Memory Inc AS4C4M16SA-6TINTR vs AS4C4M16S-6TANTR
V54C465164VEI6 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, GREEN, TSOP2-54 ProMOS Technologies Inc AS4C4M16SA-6TINTR vs V54C465164VEI6
V54C465164VELT7 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 ProMOS Technologies Inc AS4C4M16SA-6TINTR vs V54C465164VELT7
M2V64S40DTP-6 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Mitsubishi Electric AS4C4M16SA-6TINTR vs M2V64S40DTP-6
IS45S16400F-7CTLA1 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, TSOP2-54 Integrated Silicon Solution Inc AS4C4M16SA-6TINTR vs IS45S16400F-7CTLA1
Part Number Description Manufacturer Compare
HY57V641620FSTP-7I Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc AS4C4M16SA-6TINTR vs HY57V641620FSTP-7I
HY57V641620ESTP-H Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc AS4C4M16SA-6TINTR vs HY57V641620ESTP-H
KM416S4030CT-FA Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C4M16SA-6TINTR vs KM416S4030CT-FA
M2V64S40DTP-6 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Mitsubishi Electric AS4C4M16SA-6TINTR vs M2V64S40DTP-6
HY57V641620FSTP-7 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc AS4C4M16SA-6TINTR vs HY57V641620FSTP-7
HY57V641620HGTP-6 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc AS4C4M16SA-6TINTR vs HY57V641620HGTP-6
HY57V641620FTP-7I Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc AS4C4M16SA-6TINTR vs HY57V641620FTP-7I
V54C365164VELE6 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C4M16SA-6TINTR vs V54C365164VELE6
MT48LC4M16A2F4-6AIT:J Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, VFBGA-54 Micron Technology Inc AS4C4M16SA-6TINTR vs MT48LC4M16A2F4-6AIT:J
IS45S16400C1-7TLA1 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc AS4C4M16SA-6TINTR vs IS45S16400C1-7TLA1

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