LRB751S-40T1G vs RB751V-40 feature comparison

LRB751S-40T1G LRC Leshan Radio Co Ltd

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RB751V-40 Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer LESHAN RADIO CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Package Description R-PDSO-F2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.37 V 0.37 V
JESD-30 Code R-PDSO-F2 R-PDSO-G2
Non-rep Pk Forward Current-Max 0.2 A 0.2 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 0.03 A 0.03 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Rep Pk Reverse Voltage-Max 40 V 40 V
Surface Mount YES YES
Technology SCHOTTKY SCHOTTKY
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 1
Application GENERAL PURPOSE
Reverse Current-Max 0.5 µA
Reverse Test Voltage 30 V

Compare LRB751S-40T1G with alternatives

Compare RB751V-40 with alternatives