LM193MW8
vs
LM193FE883B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
NXP SEMICONDUCTORS
Part Package Code
WAFER
DIP
Package Description
DIE,
DIP,
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.39.00.01
8542.39.00.01
Amplifier Type
COMPARATOR
COMPARATOR
Average Bias Current-Max (IIB)
0.3 µA
0.3 µA
Input Offset Voltage-Max
9000 µV
10000 µV
JESD-30 Code
X-XUUC-N
R-GDIP-T8
Moisture Sensitivity Level
1
Neg Supply Voltage Limit-Max
Neg Supply Voltage-Nom (Vsup)
Number of Functions
2
2
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Type
OPEN-COLLECTOR
OPEN-COLLECTOR
Package Body Material
UNSPECIFIED
CERAMIC, GLASS-SEALED
Package Code
DIE
DIP
Package Shape
UNSPECIFIED
RECTANGULAR
Package Style
UNCASED CHIP
IN-LINE
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Not Qualified
Response Time-Nom
1300 ns
1300 ns
Screening Level
MIL-STD-883
MIL-STD-883 Class B
Supply Voltage Limit-Max
36 V
36 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
YES
NO
Technology
BIPOLAR
BIPOLAR
Temperature Grade
MILITARY
MILITARY
Terminal Form
NO LEAD
THROUGH-HOLE
Terminal Position
UPPER
DUAL
Time@Peak Reflow Temperature-Max (s)
40
Base Number Matches
2
1
Pin Count
8
Length
9.955 mm
Number of Terminals
8
Package Equivalence Code
DIP8,.3
Seated Height-Max
5.08 mm
Terminal Pitch
2.54 mm
Width
7.62 mm
Compare LM193MW8 with alternatives
Compare LM193FE883B with alternatives