LM193FE883B
vs
LM2901N
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
RAYTHEON SEMICONDUCTOR
Part Package Code
DIP
Package Description
DIP,
DIP-14
Pin Count
8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.39.00.01
8542.39.00.01
Amplifier Type
COMPARATOR
COMPARATOR
Average Bias Current-Max (IIB)
0.3 µA
Input Offset Voltage-Max
10000 µV
15000 µV
JESD-30 Code
R-GDIP-T8
R-PDIP-T14
Length
9.955 mm
Neg Supply Voltage Limit-Max
Neg Supply Voltage-Nom (Vsup)
Number of Functions
2
4
Number of Terminals
8
14
Operating Temperature-Max
125 °C
85 °C
Operating Temperature-Min
-55 °C
-40 °C
Output Type
OPEN-COLLECTOR
Package Body Material
CERAMIC, GLASS-SEALED
PLASTIC/EPOXY
Package Code
DIP
DIP
Package Equivalence Code
DIP8,.3
DIP14,.3
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Qualification Status
Not Qualified
Not Qualified
Response Time-Nom
1300 ns
1300 ns
Screening Level
MIL-STD-883 Class B
Seated Height-Max
5.08 mm
Supply Voltage Limit-Max
36 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
BIPOLAR
BIPOLAR
Temperature Grade
MILITARY
INDUSTRIAL
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Width
7.62 mm
Base Number Matches
1
16
Rohs Code
Bias Current-Max (IIB) @25C
0.25 µA
JESD-609 Code
e0
Supply Current-Max
2.5 mA
Terminal Finish
Tin/Lead (Sn/Pb)
Compare LM193FE883B with alternatives