LM108D vs LM308AN8#PBF feature comparison

LM108D Raytheon Semiconductor

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LM308AN8#PBF Linear Technology

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer RAYTHEON SEMICONDUCTOR LINEAR TECHNOLOGY CORP
Package Description DIP, DIP8,.3 DIP, DIP8,.3
Reach Compliance Code unknown compliant
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Average Bias Current-Max (IIB) 0.003 µA 0.007 µA
Bias Current-Max (IIB) @25C 0.002 µA 0.007 µA
Common-mode Reject Ratio-Min 85 dB 96 dB
Common-mode Reject Ratio-Nom 100 dB 110 dB
Frequency Compensation NO NO
Input Offset Voltage-Max 3000 µV 500 µV
JESD-30 Code R-GDIP-T8 R-PDIP-T8
JESD-609 Code e0 e3
Low-Offset NO YES
Neg Supply Voltage Limit-Max -20 V -18 V
Neg Supply Voltage-Nom (Vsup) -15 V
Number of Functions 1 1
Number of Terminals 8 8
Operating Temperature-Max 125 °C 70 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, GLASS-SEALED PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 0.6 mA 0.8 mA
Supply Voltage Limit-Max 20 V 18 V
Supply Voltage-Nom (Vsup) 15 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade MILITARY COMMERCIAL
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Unity Gain BW-Nom 1000
Voltage Gain-Min 25000 80000
Base Number Matches 4 1
Pbfree Code Yes
Part Package Code DIP
Pin Count 8
ECCN Code EAR99
HTS Code 8542.33.00.01
Length 9.78 mm
Low-Bias NO
Micropower YES
Peak Reflow Temperature (Cel) 250
Power NO
Programmable Power NO
Seated Height-Max 4.445 mm
Slew Rate-Nom 0.1 V/us
Wideband NO
Width 7.62 mm

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Compare LM308AN8#PBF with alternatives