LH2101D/883B
vs
LH2108AD/883B
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
RAYTHEON SEMICONDUCTOR
|
NATIONAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| Amplifier Type |
OPERATIONAL AMPLIFIER
|
OPERATIONAL AMPLIFIER
|
| Average Bias Current-Max (IIB) |
0.075 µA
|
0.003 µA
|
| Common-mode Reject Ratio-Nom |
96 dB
|
96 dB
|
| Input Offset Voltage-Max |
2000 µV
|
1000 µV
|
| JESD-30 Code |
R-GDIP-T16
|
R-CDIP-T16
|
| Neg Supply Voltage-Nom (Vsup) |
-20 V
|
-20 V
|
| Number of Functions |
2
|
2
|
| Number of Terminals |
16
|
16
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Current-Max |
3 mA
|
0.6 mA
|
| Supply Voltage-Nom (Vsup) |
20 V
|
20 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
BIPOLAR
|
BIPOLAR
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Part Package Code |
|
DIP
|
| Package Description |
|
DIP, DIP16,.3
|
| Pin Count |
|
16
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8542.33.00.01
|
| Architecture |
|
VOLTAGE-FEEDBACK
|
| Frequency Compensation |
|
NO
|
| JESD-609 Code |
|
e0
|
| Low-Bias |
|
NO
|
| Low-Offset |
|
NO
|
| Micropower |
|
YES
|
| Package Code |
|
DIP
|
| Package Equivalence Code |
|
DIP16,.3
|
| Power |
|
NO
|
| Programmable Power |
|
NO
|
| Screening Level |
|
38535Q/M;38534H;883B
|
| Seated Height-Max |
|
4.572 mm
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Pitch |
|
2.54 mm
|
| Unity Gain BW-Nom |
|
1000
|
| Wideband |
|
NO
|
| Width |
|
7.62 mm
|
|
|
|
Compare LH2101D/883B with alternatives
Compare LH2108AD/883B with alternatives