KST5551
vs
SMMBT5551LT1G
feature comparison
Part Life Cycle Code |
End Of Life
|
Active
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
Collector-Emitter Voltage-Max |
160 V
|
160 V
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
30
|
30
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
NPN
|
NPN
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
AMPLIFIER
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
100 MHz
|
|
Base Number Matches |
3
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
SOT-23 (TO-236) 3 LEAD
|
Pin Count |
|
3
|
Manufacturer Package Code |
|
318-08
|
Factory Lead Time |
|
4 Weeks
|
Date Of Intro |
|
1999-01-01
|
JEDEC-95 Code |
|
TO-236
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Power Dissipation-Max (Abs) |
|
0.3 W
|
Reference Standard |
|
AEC-Q101
|
Terminal Finish |
|
Matte Tin (Sn) - annealed
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
VCEsat-Max |
|
0.2 V
|
|
|
|
Compare KST5551 with alternatives
Compare SMMBT5551LT1G with alternatives