KSE340
vs
2SD1830-RB
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SANYO ELECTRIC CO LTD
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
FLANGE MOUNT, R-PSFM-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Collector Current-Max (IC) |
0.5 A
|
8 A
|
| Collector-Emitter Voltage-Max |
300 V
|
100 V
|
| Configuration |
SINGLE
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
30
|
1500
|
| JEDEC-95 Code |
TO-126
|
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
20 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
2
|
| HTS Code |
|
8541.29.00.95
|
| Additional Feature |
|
BUILT IN BIAS RESISTOR RATIO IS 0.03
|
| Power Dissipation Ambient-Max |
|
30 W
|
| Transistor Application |
|
SWITCHING
|
| Transition Frequency-Nom (fT) |
|
20 MHz
|
| VCEsat-Max |
|
1.5 V
|
|
|
|
Compare KSE340 with alternatives
Compare 2SD1830-RB with alternatives