KFM1G16Q2B-DEB8T
vs
NAND01GR4A0CZA1T
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
NUMONYX
Package Description
FBGA, BGA63,10X12,32
BGA,
Reach Compliance Code
compliant
unknown
ECCN Code
3A991.B.1.B.1
EAR99
HTS Code
8542.32.00.51
8542.32.00.51
Access Time-Max
76 ns
15000 ns
Command User Interface
YES
Data Polling
NO
JESD-30 Code
R-PBGA-B63
R-PBGA-B63
Memory Density
1073741824 bit
1073741824 bit
Memory IC Type
EEPROM CARD
FLASH
Memory Width
16
16
Moisture Sensitivity Level
3
Number of Sectors/Size
1K
Number of Terminals
63
63
Number of Words
67108864 words
67108864 words
Number of Words Code
64000000
64000000
Operating Temperature-Max
85 °C
70 °C
Operating Temperature-Min
-30 °C
Organization
64MX16
64MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
BGA
Package Equivalence Code
BGA63,10X12,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY
Page Size
1K words
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Programming Voltage
2.7 V
1.8 V
Qualification Status
Not Qualified
Not Qualified
Ready/Busy
YES
Sector Size
64K
Standby Current-Max
0.00005 A
Supply Current-Max
0.04 mA
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
COMMERCIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Toggle Bit
YES
Type
NAND TYPE
NAND TYPE
Base Number Matches
1
1
Part Package Code
BGA
Pin Count
63
JESD-609 Code
e0
Number of Functions
1
Operating Mode
ASYNCHRONOUS
Supply Voltage-Max (Vsup)
1.95 V
Supply Voltage-Min (Vsup)
1.65 V
Terminal Finish
TIN LEAD
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare KFM1G16Q2B-DEB8T with alternatives
Compare NAND01GR4A0CZA1T with alternatives