KFH1G16D2M-DEB50 vs NAND01GR4B2CZA1E feature comparison

KFH1G16D2M-DEB50 Samsung Semiconductor

Buy Now Datasheet

NAND01GR4B2CZA1E Numonyx Memory Solutions

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC NUMONYX
Part Package Code BGA BGA
Package Description VFBGA, TFBGA,
Pin Count 63 63
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 76 ns 25000 ns
Additional Feature SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 Code R-PBGA-B63 R-PBGA-B63
Length 12 mm 11 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 63 63
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -30 °C
Organization 64MX16 64MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 2.7 V 1.8 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1 mm 1.05 mm
Supply Voltage-Max (Vsup) 2.9 V 1.95 V
Supply Voltage-Min (Vsup) 2.4 V 1.7 V
Supply Voltage-Nom (Vsup) 2.65 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 9.5 mm 9 mm
Base Number Matches 1 3
JESD-609 Code e1
Peak Reflow Temperature (Cel) 260
Terminal Finish TIN SILVER COPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Type SLC NAND TYPE

Compare KFH1G16D2M-DEB50 with alternatives

Compare NAND01GR4B2CZA1E with alternatives