KFH1G16D2M-DEB50
vs
NAND01GR4B2CZA1E
feature comparison
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
NUMONYX
|
Part Package Code |
BGA
|
BGA
|
Package Description |
VFBGA,
|
TFBGA,
|
Pin Count |
63
|
63
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
76 ns
|
25000 ns
|
Additional Feature |
SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
|
|
JESD-30 Code |
R-PBGA-B63
|
R-PBGA-B63
|
Length |
12 mm
|
11 mm
|
Memory Density |
1073741824 bit
|
1073741824 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
63
|
63
|
Number of Words |
67108864 words
|
67108864 words
|
Number of Words Code |
64000000
|
64000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
70 °C
|
Operating Temperature-Min |
-30 °C
|
|
Organization |
64MX16
|
64MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
VFBGA
|
TFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
2.7 V
|
1.8 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1 mm
|
1.05 mm
|
Supply Voltage-Max (Vsup) |
2.9 V
|
1.95 V
|
Supply Voltage-Min (Vsup) |
2.4 V
|
1.7 V
|
Supply Voltage-Nom (Vsup) |
2.65 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
OTHER
|
COMMERCIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.8 mm
|
0.8 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
9.5 mm
|
9 mm
|
Base Number Matches |
1
|
3
|
JESD-609 Code |
|
e1
|
Peak Reflow Temperature (Cel) |
|
260
|
Terminal Finish |
|
TIN SILVER COPPER
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Type |
|
SLC NAND TYPE
|
|
|
|
Compare KFH1G16D2M-DEB50 with alternatives
Compare NAND01GR4B2CZA1E with alternatives