We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

KFG1G16Q2C-DEB60 vs EN29LV640U-70RWC feature comparison

KFG1G16Q2C-DEB60 Samsung Semiconductor

Buy Now Datasheet

EN29LV640U-70RWC Elite Semiconductor Memory Technology Inc

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Part Package Code BGA
Package Description VFBGA, BGA63,10X12,32 TFBGA, BGA63,8X12,32
Pin Count 63
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 76 ns 70 ns
Boot Block BOTTOM
Clock Frequency-Max (fCLK) 66 MHz
Command User Interface YES YES
Data Polling NO YES
JESD-30 Code R-PBGA-B63 R-PBGA-B63
Length 13 mm 12 mm
Memory Density 17179869184 bit 67108864 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Sectors/Size 1K 128
Number of Terminals 63 63
Number of Words 1073741824 words 4194304 words
Number of Words Code 1000000000 4000000
Operating Mode SYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -30 °C
Organization 1GX16 4MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA TFBGA
Package Equivalence Code BGA63,10X12,32 BGA63,8X12,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Page Size 1K words
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 260
Programming Voltage 1.8 V 3 V
Qualification Status Not Qualified Not Qualified
Ready/Busy YES YES
Seated Height-Max 1 mm 1.05 mm
Sector Size 64K 32K
Standby Current-Max 0.00005 A 0.000005 A
Supply Current-Max 0.04 mA 0.03 mA
Supply Voltage-Max (Vsup) 1.95 V 3.6 V
Supply Voltage-Min (Vsup) 1.7 V 3 V
Supply Voltage-Nom (Vsup) 1.8 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Toggle Bit NO YES
Type SLC NAND TYPE NOR TYPE
Width 10 mm 11 mm
Write Cycle Time-Max (tWC) 0.00007 ms
Base Number Matches 1 2
Common Flash Interface YES
Memory » Flash Memories
Memory » Flash Memories

Compare KFG1G16Q2C-DEB60 with alternatives

Compare EN29LV640U-70RWC with alternatives