KBP157 vs DI1510S_T0_10001 feature comparison

KBP157 Taiwan Semiconductor

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DI1510S_T0_10001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD PAN JIT INTERNATIONAL INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 1000 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 1.5 A 1.5 A
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO YES
Base Number Matches 4 1
Package Description R-PDSO-G4
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code R-PDSO-G4
Number of Terminals 4
Operating Temperature-Min -50 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reference Standard UL RECOGNIZED
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare KBP157 with alternatives

Compare DI1510S_T0_10001 with alternatives