KBP157
vs
DBL157GC1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Breakdown Voltage-Min
1000 V
1000 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
125 °C
150 °C
Output Current-Max
1.5 A
1.5 A
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Surface Mount
NO
NO
Base Number Matches
1
1
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
R-PDIP-T4
JESD-609 Code
e3
Number of Terminals
4
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Reference Standard
AEC-Q101; UL RECOGNIZED
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
Compare KBP157 with alternatives
Compare DBL157GC1 with alternatives