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KBL08 vs KBU6B feature comparison

KBL08 Galaxy Microelectronics

Buy Now Datasheet

KBU6B Kuwait Semiconductor Co Ltd

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD FORWARD INTERNATIONAL ELECTRONICS LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 800 V 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
Non-rep Pk Forward Current-Max 150 A 250 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 4 A 6 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 800 V 100 V
Surface Mount NO NO
Base Number Matches 39 36
Diodes » Bridge Rectifier Diodes
Diodes » Bridge Rectifier Diodes

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