K9F1208D0B-HIB0 vs K9F1208D0B-HCB00 feature comparison

K9F1208D0B-HIB0 Samsung Semiconductor

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K9F1208D0B-HCB00 Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Package Description FBGA, BGA63,10X12,32 VFBGA,
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 30 ns 30 ns
Command User Interface YES
Data Polling NO
JESD-30 Code R-PBGA-B63 R-PBGA-B63
Memory Density 536870912 bit 536870912 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Sectors/Size 4K
Number of Terminals 63 63
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 64MX8 64MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code FBGA VFBGA
Package Equivalence Code BGA63,10X12,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Page Size 512 words
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Ready/Busy YES
Sector Size 16K
Standby Current-Max 0.00005 A
Supply Current-Max 0.02 mA
Supply Voltage-Nom (Vsup) 2.65 V 2.65 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Toggle Bit NO
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code BGA
Pin Count 63
Additional Feature CONTAINS ADDITIONAL 16M BIT SPARE MEMORY
JESD-609 Code e1
Length 13 mm
Moisture Sensitivity Level 2
Number of Functions 1
Operating Mode ASYNCHRONOUS
Programming Voltage 2.7 V
Seated Height-Max 0.9 mm
Supply Voltage-Max (Vsup) 2.9 V
Supply Voltage-Min (Vsup) 2.4 V
Terminal Finish TIN SILVER COPPER
Width 8.5 mm

Compare K9F1208D0B-HIB0 with alternatives

Compare K9F1208D0B-HCB00 with alternatives