K9E2G08U0M-FIB00 vs NAND02GR4B2CN6E feature comparison

K9E2G08U0M-FIB00 Samsung Semiconductor

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NAND02GR4B2CN6E Micron Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Part Package Code SOIC TSOP
Package Description VSSOP, TSSOP,
Pin Count 48 48
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 30 ns
Additional Feature CONTAINS ADDITIONAL 64M BIT SPARE MEMORY
JESD-30 Code R-PDSO-G48 R-PDSO-G48
JESD-609 Code e6 e3
Length 15.4 mm 18.4 mm
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type FLASH FLASH
Memory Width 8 16
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 268435456 words 134217728 words
Number of Words Code 256000000 128000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 256MX8 128MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VSSOP TSSOP
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 2.7 V 1.8 V
Qualification Status Not Qualified
Seated Height-Max 0.7 mm 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V 1.95 V
Supply Voltage-Min (Vsup) 2.7 V 1.7 V
Supply Voltage-Nom (Vsup) 3.3 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN BISMUTH Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Pitch 0.5 mm 0.5 mm
Terminal Position DUAL DUAL
Width 12 mm 12 mm
Base Number Matches 1 3
Pbfree Code Yes
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Type SLC NAND TYPE

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