K7R643682M-EI250 vs GS8662Q36BD-250IT feature comparison

K7R643682M-EI250 Samsung Semiconductor

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GS8662Q36BD-250IT GSI Technology

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Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC GSI TECHNOLOGY
Part Package Code BGA BGA
Package Description LBGA, BGA165,11X15,40 LBGA, BGA165,11X15,40
Pin Count 165 165
Reach Compliance Code unknown compliant
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Additional Feature PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz 250 MHz
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
Length 17 mm 15 mm
Memory Density 75497472 bit 75497472 bit
Memory IC Type QDR SRAM QDR SRAM
Memory Width 36 36
Number of Functions 1 1
Number of Terminals 165 165
Number of Words 2097152 words 2097152 words
Number of Words Code 2000000 2000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 2MX36 2MX36
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA LBGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.4 mm 1.4 mm
Standby Voltage-Min 1.7 V 1.7 V
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15 mm 13 mm
Base Number Matches 1 1
Pbfree Code No
Factory Lead Time 8 Weeks
JESD-609 Code e0
Supply Current-Max 0.905 mA
Terminal Finish TIN LEAD

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