Datasheets
K7R643682M-EI250 by: Samsung Semiconductor

QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

Part Details for K7R643682M-EI250 by Samsung Semiconductor

Overview of K7R643682M-EI250 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for K7R643682M-EI250

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K7R643682M-EI250 Part Data Attributes:

K7R643682M-EI250 Samsung Semiconductor
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K7R643682M-EI250 Samsung Semiconductor QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description LBGA, BGA165,11X15,40
Pin Count 165
Reach Compliance Code unknown
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
Length 17 mm
Memory Density 75497472 bit
Memory IC Type QDR SRAM
Memory Width 36
Number of Functions 1
Number of Terminals 165
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 2MX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Voltage-Min 1.7 V
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15 mm

Alternate Parts for K7R643682M-EI250

This table gives cross-reference parts and alternative options found for K7R643682M-EI250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7R643682M-EI250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS61QDB22M36A-250B3I QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165 Integrated Silicon Solution Inc K7R643682M-EI250 vs IS61QDB22M36A-250B3I
CY7C1514JV18-250BZXI QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7R643682M-EI250 vs CY7C1514JV18-250BZXI
GS8672Q36BGE-250IT Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8672Q36BGE-250IT
GS8672Q36BE-250IT Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8672Q36BE-250IT
GS8672Q36BE-250I Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8672Q36BE-250I
GS8662Q36BGD-250I QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8662Q36BGD-250I
IS61QDB22M36A-250B3LI QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-165 Integrated Silicon Solution Inc K7R643682M-EI250 vs IS61QDB22M36A-250B3LI
CY7C1514AV18-250BZI QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7R643682M-EI250 vs CY7C1514AV18-250BZI
GS8672Q36BGE-250I Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8672Q36BGE-250I
IS61QDB22M36A-250M3I QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 Integrated Silicon Solution Inc K7R643682M-EI250 vs IS61QDB22M36A-250M3I
Part Number Description Manufacturer Compare
GS8672T37AGE-300T DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8672T37AGE-300T
GS81302T37E-400T DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS81302T37E-400T
GS8662T36E-250T DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1MM PITCH, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8662T36E-250T
GS8672T36BE-250IT DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology K7R643682M-EI250 vs GS8672T36BE-250IT
GS8662D36BGD-167T Standard SRAM, 2MX36, 0.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8662D36BGD-167T
CY7C1565KV18-550BZXC QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7R643682M-EI250 vs CY7C1565KV18-550BZXC
IS61QDP2B42M36A-300M3LI QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 Integrated Silicon Solution Inc K7R643682M-EI250 vs IS61QDP2B42M36A-300M3LI
GS8672T38AE-550IT Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8672T38AE-550IT
GS8672D36BGE-250T Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8672D36BGE-250T
GS8672T38AE-500T Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7R643682M-EI250 vs GS8672T38AE-500T

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