K7R641882M-FI20
vs
K7R641882M-EI20T
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
BGA, BGA165,11X15,40
|
BGA, BGA165,11X15,40
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
0.45 ns
|
0.45 ns
|
| Clock Frequency-Max (fCLK) |
166 MHz
|
166 MHz
|
| I/O Type |
SEPARATE
|
SEPARATE
|
| JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
| JESD-609 Code |
e1
|
e1
|
| Memory Density |
75497472 bit
|
75497472 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
18
|
18
|
| Number of Terminals |
165
|
165
|
| Number of Words |
4194304 words
|
4194304 words
|
| Number of Words Code |
4000000
|
4000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
4MX18
|
4MX18
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
BGA
|
| Package Equivalence Code |
BGA165,11X15,40
|
BGA165,11X15,40
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Standby Voltage-Min |
1.7 V
|
1.7 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
TIN SILVER COPPER
|
TIN SILVER COPPER
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1 mm
|
1 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Base Number Matches |
3
|
1
|
| Moisture Sensitivity Level |
|
3
|
|
|
|
Compare K7R641882M-FI20 with alternatives
Compare K7R641882M-EI20T with alternatives