We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

K7R163684B-FI25T vs K7R163684B-EC25T feature comparison

K7R163684B-FI25T Samsung Semiconductor

Buy Now Datasheet

K7R163684B-EC25T Samsung Semiconductor

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Package Description BGA, BGA165,11X15,40 BGA, BGA165,11X15,40
Reach Compliance Code unknown unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Clock Frequency-Max (fCLK) 250 MHz 250 MHz
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
Memory Density 18874368 bit 18874368 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 36 36
Moisture Sensitivity Level 1 1
Number of Terminals 165 165
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Organization 512KX36 512KX36
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA BGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.21 A 0.21 A
Standby Voltage-Min 1.7 V 1.7 V
Supply Current-Max 0.5 mA 0.5 mA
Surface Mount YES YES
Technology CMOS CMOS
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
JESD-609 Code e3
Terminal Finish MATTE TIN
Memory » SRAMs
Memory » SRAMs

Compare K7R163684B-FI25T with alternatives

Compare K7R163684B-EC25T with alternatives