K7R163684B-EC25T
vs
K7R163684B-EI250
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Package Description
BGA, BGA165,11X15,40
LBGA, BGA165,11X15,40
Reach Compliance Code
unknown
compliant
ECCN Code
3A991.B.2.A
3A991.B.2.A
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
0.45 ns
0.45 ns
Clock Frequency-Max (fCLK)
250 MHz
250 MHz
I/O Type
SEPARATE
SEPARATE
JESD-30 Code
R-PBGA-B165
R-PBGA-B165
JESD-609 Code
e3
e1
Memory Density
18874368 bit
18874368 bit
Memory IC Type
STANDARD SRAM
QDR SRAM
Memory Width
36
36
Moisture Sensitivity Level
1
2
Number of Terminals
165
165
Number of Words
524288 words
524288 words
Number of Words Code
512000
512000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Organization
512KX36
512KX36
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
BGA
LBGA
Package Equivalence Code
BGA165,11X15,40
BGA165,11X15,40
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY
GRID ARRAY, LOW PROFILE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Current-Max
0.21 A
0.21 A
Standby Voltage-Min
1.7 V
1.7 V
Supply Current-Max
0.5 mA
0.5 mA
Surface Mount
YES
YES
Technology
CMOS
CMOS
Terminal Finish
MATTE TIN
TIN SILVER COPPER
Terminal Form
BALL
BALL
Terminal Pitch
1 mm
1 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
1
1
Part Package Code
BGA
Pin Count
165
Additional Feature
PIPELINED ARCHITECTURE
Length
15 mm
Number of Functions
1
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Seated Height-Max
1.4 mm
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Temperature Grade
INDUSTRIAL
Width
13 mm
Compare K7R163684B-EC25T with alternatives
Compare K7R163684B-EI250 with alternatives