Part Details for K7R163684B-EI250 by Samsung Semiconductor
Overview of K7R163684B-EI250 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K7R163684B-EI250
K7R163684B-EI250 CAD Models
K7R163684B-EI250 Part Data Attributes
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K7R163684B-EI250
Samsung Semiconductor
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Datasheet
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K7R163684B-EI250
Samsung Semiconductor
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | LBGA, BGA165,11X15,40 | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 250 MHz | |
| I/O Type | SEPARATE | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e1 | |
| Length | 15 mm | |
| Memory Density | 18874368 bit | |
| Memory IC Type | QDR SRAM | |
| Memory Width | 36 | |
| Moisture Sensitivity Level | 2 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 524288 words | |
| Number of Words Code | 512000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 512KX36 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Current-Max | 0.21 A | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.5 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 13 mm |
Alternate Parts for K7R163684B-EI250
This table gives cross-reference parts and alternative options found for K7R163684B-EI250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7R163684B-EI250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| K7R163684B-EC25T | Samsung Semiconductor | Check for Price | Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165 | K7R163684B-EI250 vs K7R163684B-EC25T |
| K7R163684B-EI25T | Samsung Semiconductor | Check for Price | Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165 | K7R163684B-EI250 vs K7R163684B-EI25T |