K7R161882B-EI25 vs IS61QDB41M18A-250B3L feature comparison

K7R161882B-EI25 Samsung Semiconductor

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IS61QDB41M18A-250B3L Integrated Silicon Solution Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INTEGRATED SILICON SOLUTION INC
Package Description BGA, BGA165,11X15,40 TBGA, BGA165,11X15,40
Reach Compliance Code unknown compliant
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Clock Frequency-Max (fCLK) 250 MHz 250 MHz
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
JESD-609 Code e3
Memory Density 18874368 bit 18874368 bit
Memory IC Type STANDARD SRAM QDR SRAM
Memory Width 18 18
Moisture Sensitivity Level 1
Number of Terminals 165 165
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Organization 1MX18 1MX18
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA TBGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.28 A 0.27 A
Standby Voltage-Min 1.7 V 1.7 V
Supply Current-Max 0.5 mA 0.65 mA
Surface Mount YES YES
Technology CMOS CMOS
Terminal Finish MATTE TIN
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
Length 15 mm
Number of Functions 1
Operating Temperature-Max 70 °C
Operating Temperature-Min
Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 1.89 V
Supply Voltage-Min (Vsup) 1.71 V
Supply Voltage-Nom (Vsup) 1.8 V
Temperature Grade COMMERCIAL
Width 13 mm

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Compare IS61QDB41M18A-250B3L with alternatives