K6T4008C1B-DB550
vs
EDI88512CA55F32I
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
WHITE MICROELECTRONICS
|
| Part Package Code |
DIP
|
|
| Package Description |
DIP,
|
CERAMIC, FP-32
|
| Pin Count |
32
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A991.B.2.A
|
|
| HTS Code |
8542.32.00.41
|
|
| Access Time-Max |
55 ns
|
55 ns
|
| JESD-30 Code |
R-PDIP-T32
|
R-CDFP-F32
|
| Length |
41.91 mm
|
|
| Memory Density |
4194304 bit
|
4194304 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
524288 words
|
524288 words
|
| Number of Words Code |
512000
|
512000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
512KX8
|
512KX8
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
DFP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
FLATPACK
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
| Terminal Form |
THROUGH-HOLE
|
FLAT
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
15.24 mm
|
|
| Base Number Matches |
1
|
4
|
|
|
|
Compare K6T4008C1B-DB550 with alternatives
Compare EDI88512CA55F32I with alternatives