K6R1016V1C-FI12 vs KM616V1002CFI-12 feature comparison

K6R1016V1C-FI12 Samsung Semiconductor

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KM616V1002CFI-12 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description 0.75 MM PITCH, FBGA-48 0.75 MM PITCH, FBGA-48
Pin Count 48 48
Reach Compliance Code unknown unknown
ECCN Code 3A991.B.2.B 3A991.B.2.B
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 12 ns 12 ns
I/O Type COMMON COMMON
JESD-30 Code R-PBGA-B48 R-PBGA-B48
JESD-609 Code e0 e0
Length 7 mm 7 mm
Memory Density 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 65536 words 65536 words
Number of Words Code 64000 64000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 64KX16 64KX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA48,6X8,30 BGA48,6X8,30
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Standby Current-Max 0.005 A 0.005 A
Standby Voltage-Min 3 V 3 V
Supply Current-Max 0.095 mA 0.095 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN LEAD TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Width 6 mm 6 mm
Base Number Matches 3 1

Compare K6R1016V1C-FI12 with alternatives

Compare KM616V1002CFI-12 with alternatives