K4W2G1646C-HC120 vs EDJ2116DEBG-GN-F feature comparison

K4W2G1646C-HC120 Samsung Semiconductor

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EDJ2116DEBG-GN-F Micron Technology Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TFBGA, FBGA, BGA96,9X16,32
Pin Count 96
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.255 ns 0.225 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B96 R-PBGA-B96
Length 13.3 mm
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM DDR3 DRAM
Memory Width 16 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96 96
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C 85 °C
Operating Temperature-Min
Organization 128MX16 128MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA FBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V 1.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 7.5 mm
Base Number Matches 1 2
Rohs Code Yes
Clock Frequency-Max (fCLK) 800 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
Output Characteristics 3-STATE
Package Equivalence Code BGA96,9X16,32
Refresh Cycles 8192
Sequential Burst Length 4,8

Compare K4W2G1646C-HC120 with alternatives

Compare EDJ2116DEBG-GN-F with alternatives