EDJ2116DEBG-GN-F vs K4W2G1646C-HC110 feature comparison

EDJ2116DEBG-GN-F Micron Technology Inc

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K4W2G1646C-HC110 Samsung Semiconductor

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Package Description FBGA, BGA96,9X16,32 HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.225 ns 0.195 ns
Clock Frequency-Max (fCLK) 800 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B96 R-PBGA-B96
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type DDR3 DRAM DDR DRAM
Memory Width 16 16
Number of Terminals 96 96
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Temperature-Max 85 °C 95 °C
Operating Temperature-Min
Organization 128MX16 128MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code FBGA TFBGA
Package Equivalence Code BGA96,9X16,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Supply Voltage-Nom (Vsup) 1.5 V 1.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 2 1
Part Package Code BGA
Pin Count 96
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Length 13.3 mm
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Width 7.5 mm

Compare EDJ2116DEBG-GN-F with alternatives

Compare K4W2G1646C-HC110 with alternatives