K4T51083QQ-BCF70
vs
NT5TU64M8FE-ACT
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
NANYA TECHNOLOGY CORP
Package Description
VFBGA,
VFBGA,
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.28
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
0.4 ns
0.4 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B60
R-PBGA-B60
JESD-609 Code
e1
Length
9.5 mm
9 mm
Memory Density
536870912 bit
536870912 bit
Memory IC Type
DDR2 DRAM
DDR2 DRAM
Memory Width
8
8
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
60
60
Number of Words
67108864 words
67108864 words
Number of Words Code
64000000
64000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Organization
64MX8
64MX8
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
VFBGA
VFBGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Seated Height-Max
1 mm
1 mm
Self Refresh
YES
YES
Supply Voltage-Max (Vsup)
1.9 V
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Width
7.5 mm
7.5 mm
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare K4T51083QQ-BCF70 with alternatives
Compare NT5TU64M8FE-ACT with alternatives