K4T51083QQ-BCF70 vs IS43DR86400C-25EBLI feature comparison

K4T51083QQ-BCF70 Samsung Semiconductor

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IS43DR86400C-25EBLI Integrated Silicon Solution Inc

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INTEGRATED SILICON SOLUTION INC
Package Description VFBGA, TFBGA,
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.4 ns 0.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60 R-PBGA-B60
JESD-609 Code e1
Length 9.5 mm 10.5 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR2 DRAM DDR DRAM
Memory Width 8 8
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 60 60
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Organization 64MX8 64MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Seated Height-Max 1 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 7.5 mm 8 mm
Base Number Matches 1 1
Part Package Code BGA
Pin Count 60
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Temperature Grade INDUSTRIAL

Compare K4T51083QQ-BCF70 with alternatives

Compare IS43DR86400C-25EBLI with alternatives