K4T51043QI-HCE6
vs
K4T51043QI-HCE6T
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.28
8542.32.00.28
Access Time-Max
0.45 ns
0.45 ns
Clock Frequency-Max (fCLK)
333 MHz
333 MHz
I/O Type
COMMON
COMMON
Interleaved Burst Length
4,8
4,8
JESD-30 Code
R-PBGA-B60
R-PBGA-B60
JESD-609 Code
e1
e1
Memory Density
536870912 bit
536870912 bit
Memory IC Type
DDR2 DRAM
DDR2 DRAM
Memory Width
4
4
Moisture Sensitivity Level
2
1
Number of Terminals
60
60
Number of Words
134217728 words
134217728 words
Number of Words Code
128000000
128000000
Operating Temperature-Max
95 °C
95 °C
Operating Temperature-Min
Organization
128MX4
128MX4
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
FBGA
Package Equivalence Code
BGA60,9X11,32
BGA60,9X11,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel)
260
260
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Sequential Burst Length
4,8
4,8
Standby Current-Max
0.008 A
0.008 A
Supply Current-Max
0.115 mA
0.115 mA
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
OTHER
Terminal Finish
TIN SILVER COPPER
TIN SILVER COPPER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
1
1
Compare K4T51043QI-HCE6 with alternatives
Compare K4T51043QI-HCE6T with alternatives