K4T1G164QD-ZCE6
vs
MT47H64M16HR-3:GTR
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
MICRON TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.32
8542.32.00.32
Access Time-Max
0.45 ns
0.45 ns
Clock Frequency-Max (fCLK)
333 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B84
R-PBGA-B84
Memory Density
1073741824 bit
1073741824 bit
Memory IC Type
DDR2 DRAM
DDR2 DRAM
Memory Width
16
16
Moisture Sensitivity Level
3
3
Number of Terminals
84
84
Number of Words
67108864 words
67108864 words
Number of Words Code
64000000
64000000
Organization
64MX16
64MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
TFBGA
Package Equivalence Code
BGA84,9X15,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
260
260
Qualification Status
Not Qualified
Refresh Cycles
8192
Sequential Burst Length
4,8
Standby Current-Max
0.015 A
Supply Current-Max
0.255 mA
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
1
1
Package Description
TFBGA,
Access Mode
MULTI BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
JESD-609 Code
e1
Length
12.5 mm
Number of Functions
1
Number of Ports
1
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Temperature Grade
OTHER
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s)
30
Width
8 mm
Compare K4T1G164QD-ZCE6 with alternatives
Compare MT47H64M16HR-3:GTR with alternatives