K4T1G084QE-HLE7
vs
K4T1G084QD-ZCE70
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Package Description
TFBGA, BGA60,9X11,32
TFBGA, BGA60,9X11,32
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.32
8542.32.00.32
Access Mode
MULTI BANK PAGE BURST
MULTI BANK PAGE BURST
Access Time-Max
0.4 ns
0.4 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
400 MHz
400 MHz
I/O Type
COMMON
COMMON
Interleaved Burst Length
4,8
4,8
JESD-30 Code
R-PBGA-B60
R-PBGA-B60
JESD-609 Code
e3
Length
9.5 mm
11 mm
Memory Density
1073741824 bit
1073741824 bit
Memory IC Type
DDR2 DRAM
DDR2 DRAM
Memory Width
8
8
Moisture Sensitivity Level
1
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
60
60
Number of Words
134217728 words
134217728 words
Number of Words Code
128000000
128000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
95 °C
Operating Temperature-Min
Organization
128MX8
128MX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
TFBGA
Package Equivalence Code
BGA60,9X11,32
BGA60,9X11,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Seated Height-Max
1.2 mm
1.2 mm
Self Refresh
YES
YES
Sequential Burst Length
4,8
4,8
Supply Current-Max
0.17 mA
0.265 mA
Supply Voltage-Max (Vsup)
1.9 V
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
OTHER
Terminal Finish
MATTE TIN
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Width
7.5 mm
9 mm
Base Number Matches
1
1
Part Package Code
BGA
Pin Count
60
Compare K4T1G084QE-HLE7 with alternatives
Compare K4T1G084QD-ZCE70 with alternatives