K4N56163QF-ZC250 vs MT6V16M16F2-3C feature comparison

K4N56163QF-ZC250 Samsung Semiconductor

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MT6V16M16F2-3C Micron Technology Inc

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Part Package Code BGA BGA
Package Description TFBGA, BGA84,9X15,32 FBGA-84
Pin Count 84 84
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST BLOCK ORIENTED PROTOCOL
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH SELF CONTAINED REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B84
JESD-609 Code e1 e1
Length 13 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type DDR2 DRAM RAMBUS DRAM
Memory Width 16 16
Moisture Sensitivity Level 2
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min
Organization 16MX16 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA BGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES YES
Sequential Burst Length 4,8
Supply Current-Max 0.43 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 11 mm
Base Number Matches 1 1

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